APA (7th ed.) Citation

Okabe, T., Kikkawa, T., & Tanaka, H. (1990). Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine. Journal of Applied Physics, 68, 4064. https://doi.org/10.1063/1.346243

Chicago Style (17th ed.) Citation

Okabe, T., T. Kikkawa, and H. Tanaka. "Growth Temperature Dependence of EL2 Concentration in GaAs Grown by Metalorganic Vapor-phase Epitaxy Using Tertiarybutylarsine." Journal of Applied Physics 68 (1990): 4064. https://doi.org/10.1063/1.346243.

MLA (9th ed.) Citation

Okabe, T., et al. "Growth Temperature Dependence of EL2 Concentration in GaAs Grown by Metalorganic Vapor-phase Epitaxy Using Tertiarybutylarsine." Journal of Applied Physics, vol. 68, 1990, p. 4064, https://doi.org/10.1063/1.346243.