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Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.

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Bibliographic Details
Title: Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.
Authors: Okabe, T., Kikkawa, T., Tanaka, H.
Source: Journal of Applied Physics; October 15 1990, Vol. 68, p4064-4067, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501799334
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; October 15 1990, Vol. 68, p4064-4067, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501799334
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.346243
    Languages:
      – Code: eng
        Text: English
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      Pagination:
        PageCount: 4
        StartPage: 4064
    Titles:
      – TitleFull: Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.
        Type: main
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          Name:
            NameFull: Okabe, T.
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            NameFull: Kikkawa, T.
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            NameFull: Tanaka, H.
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            – D: 15
              M: 10
              Text: October 15 1990
              Type: published
              Y: 1990
          Identifiers:
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              Value: 68
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            – TitleFull: Journal of Applied Physics
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