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Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.

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Bibliographic Details
Title: Growth temperature dependence of EL2 concentration in GaAs grown by metalorganic vapor-phase epitaxy using tertiarybutylarsine.
Authors: Okabe, T., Kikkawa, T., Tanaka, H.
Source: Journal of Applied Physics; October 15 1990, Vol. 68, p4064-4067, 4p
Database: Applied Science & Technology Source
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