Growth of epitaxial PrO2 thin films on hydrogen terminated Si(111) by pulsed laser deposition.
Saved in:
| Title: | Growth of epitaxial PrO2 thin films on hydrogen terminated Si(111) by pulsed laser deposition. |
|---|---|
| Authors: | Fork, D. K., Fenner, D. B., Geballe, T. H. |
| Source: | Journal of Applied Physics; October 15 1990, Vol. 68, p4316-4318, 3p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
|---|---|
| DOI: | 10.1063/1.346228 |
