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Raman-microprobe study of stress and crystal orientation in laser-crystallized silicon.

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Bibliographic Details
Title: Raman-microprobe study of stress and crystal orientation in laser-crystallized silicon.
Authors: Kolb, G., Salbert, Th, Abstreiter, G.
Source: Journal of Applied Physics; March 1 1991, Vol. 69, p3387-3389, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501849688
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Raman-microprobe study of stress and crystal orientation in laser-crystallized silicon.
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  Data: <searchLink fieldCode="AU" term="%22Kolb%2C+G%2E%22">Kolb, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Salbert%2C+Th%22">Salbert, Th</searchLink><br /><searchLink fieldCode="AU" term="%22Abstreiter%2C+G%2E%22">Abstreiter, G.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 1 1991, Vol. 69, p3387-3389, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501849688
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.348516
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 3387
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      – TitleFull: Raman-microprobe study of stress and crystal orientation in laser-crystallized silicon.
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            NameFull: Kolb, G.
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            NameFull: Salbert, Th
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            NameFull: Abstreiter, G.
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            – D: 01
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              Text: March 1 1991
              Type: published
              Y: 1991
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              Value: 69
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            – TitleFull: Journal of Applied Physics
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