Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.
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| Title: | Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures. |
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| Authors: | Nojima, S., Nakashima, K., Kawamura, Y. |
| Source: | Journal of Applied Physics; March 15 1988, Vol. 63, p1955-1960, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.341093 |