Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.

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Title: Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.
Authors: Nojima, S., Nakashima, K., Kawamura, Y.
Source: Journal of Applied Physics; March 15 1988, Vol. 63, p1955-1960, 6p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 501974362
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.
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  Data: <searchLink fieldCode="AU" term="%22Nojima%2C+S%2E%22">Nojima, S.</searchLink><br /><searchLink fieldCode="AU" term="%22Nakashima%2C+K%2E%22">Nakashima, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Kawamura%2C+Y%2E%22">Kawamura, Y.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; March 15 1988, Vol. 63, p1955-1960, 6p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=501974362
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.341093
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 6
        StartPage: 1955
    Titles:
      – TitleFull: Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.
        Type: main
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          Name:
            NameFull: Nojima, S.
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            NameFull: Nakashima, K.
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            NameFull: Kawamura, Y.
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            – D: 15
              M: 03
              Text: March 15 1988
              Type: published
              Y: 1988
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              Value: 00218979
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              Value: 63
          Titles:
            – TitleFull: Journal of Applied Physics
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