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Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.

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Bibliographic Details
Title: Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.
Authors: Nojima, S., Nakashima, K., Kawamura, Y.
Source: Journal of Applied Physics; March 15 1988, Vol. 63, p1955-1960, 6p
Database: Applied Science & Technology Source
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