X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth.
Saved in:
| Title: | X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth. |
|---|---|
| Authors: | Wenzel, Kevin W., Petrasso, Richard D. |
| Source: | Review of Scientific Instruments; Aug1988, Vol. 59 Issue 2, p1380-1387, 8p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00346748 |
|---|---|
| DOI: | 10.1063/1.1139673 |
