APA (7th ed.) Citation

Wenzel, K. W., & Petrasso, R. D. (1988). X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: Evidence that the x-ray sensitive depth is not generally the depletion depth. Review of Scientific Instruments, 59(2), 1380. https://doi.org/10.1063/1.1139673

Chicago Style (17th ed.) Citation

Wenzel, Kevin W., and Richard D. Petrasso. "X-ray Response of Silicon Surface-barrier Diodes at 8 and 17.5 KeV: Evidence That the X-ray Sensitive Depth Is Not Generally the Depletion Depth." Review of Scientific Instruments 59, no. 2 (1988): 1380. https://doi.org/10.1063/1.1139673.

MLA (9th ed.) Citation

Wenzel, Kevin W., and Richard D. Petrasso. "X-ray Response of Silicon Surface-barrier Diodes at 8 and 17.5 KeV: Evidence That the X-ray Sensitive Depth Is Not Generally the Depletion Depth." Review of Scientific Instruments, vol. 59, no. 2, 1988, p. 1380, https://doi.org/10.1063/1.1139673.