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X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth.

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Title: X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth.
Authors: Wenzel, Kevin W., Petrasso, Richard D.
Source: Review of Scientific Instruments; Aug1988, Vol. 59 Issue 2, p1380-1387, 8p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
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PubType: Academic Journal
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  Data: X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth.
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  Data: <searchLink fieldCode="AU" term="%22Wenzel%2C+Kevin+W%2E%22">Wenzel, Kevin W.</searchLink><br /><searchLink fieldCode="AU" term="%22Petrasso%2C+Richard+D%2E%22">Petrasso, Richard D.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Review+of+Scientific+Instruments%22">Review of Scientific Instruments</searchLink>; Aug1988, Vol. 59 Issue 2, p1380-1387, 8p
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        Value: 10.1063/1.1139673
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 1380
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      – TitleFull: X-ray response of silicon surface-barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth.
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            NameFull: Wenzel, Kevin W.
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            NameFull: Petrasso, Richard D.
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            – D: 01
              M: 08
              Text: Aug1988
              Type: published
              Y: 1988
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              Value: 59
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