Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.
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| Title: | Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers. |
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| Authors: | Yang, Xuelin, Arita, Munetaka, Kako, Satoshi |
| Source: | Applied Physics Letters; August 8 2011, Vol. 99 Issue 6, p061914-061914, 1p |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.3626589 |
