APA (7th ed.) Citation

Yang, X., Arita, M., & Kako, S. (2011). Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers. Applied Physics Letters, 99(6), 061914. https://doi.org/10.1063/1.3626589

Chicago Style (17th ed.) Citation

Yang, Xuelin, Munetaka Arita, and Satoshi Kako. "Formation of M-plane InGaN/GaN Quantum Dots Using Strain Engineering of AlGaN/AlN Interlayers." Applied Physics Letters 99, no. 6 (2011): 061914. https://doi.org/10.1063/1.3626589.

MLA (9th ed.) Citation

Yang, Xuelin, et al. "Formation of M-plane InGaN/GaN Quantum Dots Using Strain Engineering of AlGaN/AlN Interlayers." Applied Physics Letters, vol. 99, no. 6, 2011, p. 061914, https://doi.org/10.1063/1.3626589.