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Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.

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Bibliographic Details
Title: Formation of m-plane InGaN/GaN quantum dots using strain engineering of AlGaN/AlN interlayers.
Authors: Yang, Xuelin, Arita, Munetaka, Kako, Satoshi
Source: Applied Physics Letters; August 8 2011, Vol. 99 Issue 6, p061914-061914, 1p
Database: Applied Science & Technology Source
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