Admittance studies of neutron-irradiated silicon p+-n diodes.

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Bibliographic Details
Title: Admittance studies of neutron-irradiated silicon p+-n diodes.
Authors: Tokuda, Y., Usami, A.
Source: Journal of Applied Physics; April 1977, Vol. 48, p1668-1672, 5p
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.323850