Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

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Bibliographic Details
Title: Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors
Authors: Lo, Wen-Hung1, Chang, Ting-Chang1,2, tcchang@mail.phys.nsysu.edu.tw, Dai, Chih-Hao3, Chung, Wan-Lin1, Chen, Ching-En4, Ho, Szu-Han4, Tsai, Jyun-Yu1, Chen, Hua-Mao5, Liu, Guan-Ru1, Cheng, Osbert6, Huang, Cheng-Tung6
Source: Thin Solid Films; Jan2013, Vol. 528, p10-18, 9p
Database: Applied Science & Technology Source
Description
ISSN:00406090
DOI:10.1016/j.tsf.2012.09.087