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Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact.

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Title: Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact.
Authors: Zhang, Xieqiu1,2, Wang, Kedong2, Chen, Wenjin3, Loy, M. M. T.3, Wang, J. N.3, Xiao, Xudong1,2
Source: Journal of Applied Physics; Jul2013, Vol. 114 Issue 1, p013701-013701-5, 1p, 1 Color Photograph, 1 Diagram, 1 Graph
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 88899396
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; Jul2013, Vol. 114 Issue 1, p013701-013701-5, 1p, 1 Color Photograph, 1 Diagram, 1 Graph
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=88899396
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1063/1.4812385
    Languages:
      – Code: eng
        Text: English
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        PageCount: 1
        StartPage: 013701
    Titles:
      – TitleFull: Electrical transport through a scanning tunnelling microscope tip and a heavily doped Si contact.
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            NameFull: Zhang, Xieqiu
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            NameFull: Wang, Kedong
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            NameFull: Chen, Wenjin
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            NameFull: Loy, M. M. T.
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            NameFull: Wang, J. N.
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            NameFull: Xiao, Xudong
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          Dates:
            – D: 07
              M: 07
              Text: Jul2013
              Type: published
              Y: 2013
          Identifiers:
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              Value: 00218979
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              Value: 114
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