Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors.
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| Title: | Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors. |
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| Authors: | Tsai, Jyun-Yu1, Chang, Ting-Chang1,2, Lo, Wen-Hung1, Ho, Szu-Han3, Chen, Ching-En3, Chen, Hua-Mao4, Tseng, Tseung-Yuen3, Tai, Ya-Hsiang4, Cheng, Osbert5, Huang, Cheng-Tung5 |
| Source: | Journal of Applied Physics; Sep2013, Vol. 114 Issue 12, p124505, 5p, 6 Graphs |
| Database: | Applied Science & Technology Source |
| ISSN: | 00218979 |
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| DOI: | 10.1063/1.4822158 |
