APA (7th ed.) Citation

Tsai, J., Chang, T., Lo, W., Ho, S., Chen, C., Chen, H., . . . Huang, C. (2013). Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors. Journal of Applied Physics, 114(12), 124505. https://doi.org/10.1063/1.4822158

Chicago Style (17th ed.) Citation

Tsai, Jyun-Yu, et al. "Abnormal Threshold Voltage Shift Under Hot Carrier Stress in Ti1-xNx/HfO2 P-channel Metal-oxide-semiconductor Field-effect Transistors." Journal of Applied Physics 114, no. 12 (2013): 124505. https://doi.org/10.1063/1.4822158.

MLA (9th ed.) Citation

Tsai, Jyun-Yu, et al. "Abnormal Threshold Voltage Shift Under Hot Carrier Stress in Ti1-xNx/HfO2 P-channel Metal-oxide-semiconductor Field-effect Transistors." Journal of Applied Physics, vol. 114, no. 12, 2013, p. 124505, https://doi.org/10.1063/1.4822158.