Toyoshima, Y., Kumata, K., Itoh, U., Arai, K., Matsuda, A., Washida, N., . . . Katsuumi, K. (1985). Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon. Applied Physics Letters, 46(6), 584. https://doi.org/10.1063/1.95914
Chicago Style (17th ed.) CitationToyoshima, Y., K. Kumata, U. Itoh, K. Arai, A. Matsuda, N. Washida, G. Inoue, and K. Katsuumi. "Ar (3P2) Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon." Applied Physics Letters 46, no. 6 (1985): 584. https://doi.org/10.1063/1.95914.
MLA (9th ed.) CitationToyoshima, Y., et al. "Ar (3P2) Induced Chemical Vapor Deposition of Hydrogenated Amorphous Silicon." Applied Physics Letters, vol. 46, no. 6, 1985, p. 584, https://doi.org/10.1063/1.95914.
Warning: These citations may not always be 100% accurate.