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Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon.

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Title: Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon.
Authors: Toyoshima, Y., Kumata, K., Itoh, U., Arai, K., Matsuda, A., Washida, N., Inoue, G., Katsuumi, K.
Source: Applied Physics Letters; 3/15/1985, Vol. 46 Issue 6, p584, 3p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9817262
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Ar (3P2) induced chemical vapor deposition of hydrogenated amorphous silicon.
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  Data: <searchLink fieldCode="AU" term="%22Toyoshima%2C+Y%2E%22">Toyoshima, Y.</searchLink><br /><searchLink fieldCode="AU" term="%22Kumata%2C+K%2E%22">Kumata, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Itoh%2C+U%2E%22">Itoh, U.</searchLink><br /><searchLink fieldCode="AU" term="%22Arai%2C+K%2E%22">Arai, K.</searchLink><br /><searchLink fieldCode="AU" term="%22Matsuda%2C+A%2E%22">Matsuda, A.</searchLink><br /><searchLink fieldCode="AU" term="%22Washida%2C+N%2E%22">Washida, N.</searchLink><br /><searchLink fieldCode="AU" term="%22Inoue%2C+G%2E%22">Inoue, G.</searchLink><br /><searchLink fieldCode="AU" term="%22Katsuumi%2C+K%2E%22">Katsuumi, K.</searchLink>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 3/15/1985, Vol. 46 Issue 6, p584, 3p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=9817262
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        Value: 10.1063/1.95914
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        Text: English
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            NameFull: Toyoshima, Y.
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            NameFull: Kumata, K.
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            NameFull: Arai, K.
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              Text: 3/15/1985
              Type: published
              Y: 1985
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