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Microstructure of silicon implanted with high dose oxygen ions.

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Bibliographic Details
Title: Microstructure of silicon implanted with high dose oxygen ions.
Authors: Jaussaud, C., Stoemenos, J., Margail, J., Dupuy, M., Blanchard, B., Bruel, M.
Source: Applied Physics Letters; 6/1/1985, Vol. 46 Issue 11, p1064, 3p
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 9817640
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Microstructure of silicon implanted with high dose oxygen ions.
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      – Type: doi
        Value: 10.1063/1.95761
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      – Code: eng
        Text: English
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        PageCount: 3
        StartPage: 1064
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      – TitleFull: Microstructure of silicon implanted with high dose oxygen ions.
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            NameFull: Stoemenos, J.
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            NameFull: Margail, J.
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            NameFull: Dupuy, M.
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            NameFull: Blanchard, B.
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            – D: 01
              M: 06
              Text: 6/1/1985
              Type: published
              Y: 1985
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              Value: 46
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              Value: 11
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            – TitleFull: Applied Physics Letters
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