Fabrication and characterization of metal-ferroelectric-semiconductor non-volatile memory using BaTiO3 film prepared through sol–gel process.

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Bibliographic Details
Title: Fabrication and characterization of metal-ferroelectric-semiconductor non-volatile memory using BaTiO3 film prepared through sol–gel process.
Authors: Debnath, Ajit1 (AUTHOR), Srivastava, Vibhu1 (AUTHOR), Sunny1 (AUTHOR) sunnymeharwal@gmail.com, Singh, Sanjai1 (AUTHOR)
Source: Applied Physics A: Materials Science & Processing. Jan2020, Vol. 126 Issue 1, p1-8. 8p. 2 Diagrams, 1 Chart, 8 Graphs.
Database: Academic Search Ultimate
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ISSN:09478396
DOI:10.1007/s00339-019-3192-6