View in EDS HTML Full Text PDF Full Text

2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications.

Saved in:
Bibliographic Details
Title: 2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications.
Authors: Li, Bixin1,2,3 (AUTHOR), Xia, Fei2 (AUTHOR), Du, Bin4 (AUTHOR), Zhang, Shiyang1 (AUTHOR), Xu, Lan1 (AUTHOR) xulan@hnfnu.edu.cn, Su, Qiong1 (AUTHOR), Zhang, Dingke5 (AUTHOR) zhangdk@cqnu.edu.cn, Yang, Junliang3 (AUTHOR) junliang.yang@csu.edu.cn
Source: Advanced Science. 6/19/2024, Vol. 11 Issue 23, p1-19. 19p.
Database: Academic Search Ultimate
Full text is not displayed to guests.
Description
ISSN:21983844
DOI:10.1002/advs.202310263