APA (7th ed.) Citation

Li, B., Xia, F., Du, B., Zhang, S., Xu, L., Su, Q., . . . Yang, J. (2024). 2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications. Advanced Science, 11(23), 1. https://doi.org/10.1002/advs.202310263

Chicago Style (17th ed.) Citation

Li, Bixin, Fei Xia, Bin Du, Shiyang Zhang, Lan Xu, Qiong Su, Dingke Zhang, and Junliang Yang. "2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications." Advanced Science 11, no. 23 (2024): 1. https://doi.org/10.1002/advs.202310263.

MLA (9th ed.) Citation

Li, Bixin, et al. "2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications." Advanced Science, vol. 11, no. 23, 2024, p. 1, https://doi.org/10.1002/advs.202310263.