2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications.
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| Title: | 2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications. |
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| Authors: | Li, Bixin1,2,3 (AUTHOR), Xia, Fei2 (AUTHOR), Du, Bin4 (AUTHOR), Zhang, Shiyang1 (AUTHOR), Xu, Lan1 (AUTHOR) xulan@hnfnu.edu.cn, Su, Qiong1 (AUTHOR), Zhang, Dingke5 (AUTHOR) zhangdk@cqnu.edu.cn, Yang, Junliang3 (AUTHOR) junliang.yang@csu.edu.cn |
| Source: | Advanced Science. 6/19/2024, Vol. 11 Issue 23, p1-19. 19p. |
| Database: | Academic Search Ultimate |
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