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Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications.

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Title: Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications.
Authors: Young, L. B.1 (AUTHOR), Lin, Y. H. G.1 (AUTHOR), Wan, H. W.1 (AUTHOR), Liu, J.1 (AUTHOR), Cheng, Y. T.1 (AUTHOR), Chen, B. Y.2 (AUTHOR), Chen, K. M.2 (AUTHOR), Chang, H. W.3 (AUTHOR), Wang, M. J.3 (AUTHOR), Kwo, J.4 (AUTHOR) raynien@phys.nthu.edu.tw, Hong, M.1 (AUTHOR) raynien@phys.nthu.edu.tw
Source: APL Electronic Devices. Mar2025, Vol. 1 Issue 1, p1-8. 8p.
Database: Academic Search Ultimate
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ISSN:29958423
DOI:10.1063/5.0244788