APA (7th ed.) Citation

Young, L. B., Lin, Y. H. G., Wan, H. W., Liu, J., Cheng, Y. T., Chen, B. Y., . . . Hong, M. (2025). Ultralow subthreshold swing of 9 mV/dec for planar bulk GaAs MOSFETs at 4 K in quantum computing applications. APL Electronic Devices, 1(1), 1. https://doi.org/10.1063/5.0244788

Chicago Style (17th ed.) Citation

Young, L. B., et al. "Ultralow Subthreshold Swing of 9 MV/dec for Planar Bulk GaAs MOSFETs at 4 K in Quantum Computing Applications." APL Electronic Devices 1, no. 1 (2025): 1. https://doi.org/10.1063/5.0244788.

MLA (9th ed.) Citation

Young, L. B., et al. "Ultralow Subthreshold Swing of 9 MV/dec for Planar Bulk GaAs MOSFETs at 4 K in Quantum Computing Applications." APL Electronic Devices, vol. 1, no. 1, 2025, p. 1, https://doi.org/10.1063/5.0244788.