Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors.
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| Title: | Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors. |
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| Authors: | Khan, Asir Intisar1,2, Kim, Jeong-Kyu3, Sikder, Urmita1, Das, Koushik1,2,4, Rodriguez, Thomas3, Soman, Rohith3, Chowdhury, Srabanti3,5, Salahuddin, Sayeef1,2 sayeef@berkeley.edu |
| Source: | Science. 7/31/2025, Vol. 389 Issue 6759, p508-511. 4p. |
| Database: | Academic Search Ultimate |
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| ISSN: | 00368075 |
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| DOI: | 10.1126/science.adx6955 |
