APA (7th ed.) Citation

Khan, A. I., Kim, J., Sikder, U., Das, K., Rodriguez, T., Soman, R., . . . Salahuddin, S. (2025). Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors. Science, 389(6759), 508. https://doi.org/10.1126/science.adx6955

Chicago Style (17th ed.) Citation

Khan, Asir Intisar, Jeong-Kyu Kim, Urmita Sikder, Koushik Das, Thomas Rodriguez, Rohith Soman, Srabanti Chowdhury, and Sayeef Salahuddin. "Negative Capacitance Overcomes Schottky-gate Limits in GaN High-electron-mobility Transistors." Science 389, no. 6759 (2025): 508. https://doi.org/10.1126/science.adx6955.

MLA (9th ed.) Citation

Khan, Asir Intisar, et al. "Negative Capacitance Overcomes Schottky-gate Limits in GaN High-electron-mobility Transistors." Science, vol. 389, no. 6759, 2025, p. 508, https://doi.org/10.1126/science.adx6955.