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Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors.

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Title: Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors.
Authors: Khan, Asir Intisar1,2, Kim, Jeong-Kyu3, Sikder, Urmita1, Das, Koushik1,2,4, Rodriguez, Thomas3, Soman, Rohith3, Chowdhury, Srabanti3,5, Salahuddin, Sayeef1,2 sayeef@berkeley.edu
Source: Science. 7/31/2025, Vol. 389 Issue 6759, p508-511. 4p.
Database: Academic Search Ultimate
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An: 188103398
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  Data: <searchLink fieldCode="JN" term="%22Science%22">Science</searchLink>. 7/31/2025, Vol. 389 Issue 6759, p508-511. 4p.
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        Value: 10.1126/science.adx6955
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        Text: English
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      – TitleFull: Negative capacitance overcomes Schottky-gate limits in GaN high-electron-mobility transistors.
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              Text: 7/31/2025
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