p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.
Saved in:
| Title: | p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. |
|---|---|
| Authors: | Kumar, Mohit1 (AUTHOR) mohit.kumar@cea.fr, Labau, Timothée1,2 (AUTHOR), Xu, Laurent1 (AUTHOR), Zgheib, Joelle1 (AUTHOR), Escoffier, René1 (AUTHOR), Buckley, Julien1 (AUTHOR) julien.buckley@cea.fr |
| Source: | Scientific Reports. 10/21/2025, Vol. 15 Issue 1, p1-10. 10p. |
| Database: | Academic Search Ultimate |
|
Full text is not displayed to guests.
Login for full access.
|
|
| ISSN: | 20452322 |
|---|---|
| DOI: | 10.1038/s41598-025-20675-6 |
