APA (7th ed.) Citation

Kumar, M., Labau, T., Xu, L., Zgheib, J., Escoffier, R., & Buckley, J. (2025). p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications. Scientific Reports, 15(1), 1. https://doi.org/10.1038/s41598-025-20675-6

Chicago Style (17th ed.) Citation

Kumar, Mohit, Timothée Labau, Laurent Xu, Joelle Zgheib, René Escoffier, and Julien Buckley. "P-GaN Source Integrated GaN/AlGaN/GaN Double Heterojunction Field-effect Transistor (FET) for Next-generation Electronic Applications." Scientific Reports 15, no. 1 (2025): 1. https://doi.org/10.1038/s41598-025-20675-6.

MLA (9th ed.) Citation

Kumar, Mohit, et al. "P-GaN Source Integrated GaN/AlGaN/GaN Double Heterojunction Field-effect Transistor (FET) for Next-generation Electronic Applications." Scientific Reports, vol. 15, no. 1, 2025, p. 1, https://doi.org/10.1038/s41598-025-20675-6.