View in EDS HTML Full Text PDF Full Text

p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.

Saved in:
Bibliographic Details
Title: p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.
Authors: Kumar, Mohit1 (AUTHOR) mohit.kumar@cea.fr, Labau, Timothée1,2 (AUTHOR), Xu, Laurent1 (AUTHOR), Zgheib, Joelle1 (AUTHOR), Escoffier, René1 (AUTHOR), Buckley, Julien1 (AUTHOR) julien.buckley@cea.fr
Source: Scientific Reports. 10/21/2025, Vol. 15 Issue 1, p1-10. 10p.
Database: Academic Search Ultimate
Full text is not displayed to guests.
FullText Links:
  – Type: pdflink
Text:
  Availability: 1
Header DbId: asn
DbLabel: Academic Search Ultimate
An: 188800101
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Kumar%2C+Mohit%22">Kumar, Mohit</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> mohit.kumar@cea.fr</i><br /><searchLink fieldCode="AR" term="%22Labau%2C+Timothée%22">Labau, Timothée</searchLink><relatesTo>1,2</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Xu%2C+Laurent%22">Xu, Laurent</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Zgheib%2C+Joelle%22">Zgheib, Joelle</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Escoffier%2C+René%22">Escoffier, René</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Buckley%2C+Julien%22">Buckley, Julien</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> julien.buckley@cea.fr</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Scientific+Reports%22">Scientific Reports</searchLink>. 10/21/2025, Vol. 15 Issue 1, p1-10. 10p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=188800101
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1038/s41598-025-20675-6
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 10
        StartPage: 1
    Titles:
      – TitleFull: p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Kumar, Mohit
      – PersonEntity:
          Name:
            NameFull: Labau, Timothée
      – PersonEntity:
          Name:
            NameFull: Xu, Laurent
      – PersonEntity:
          Name:
            NameFull: Zgheib, Joelle
      – PersonEntity:
          Name:
            NameFull: Escoffier, René
      – PersonEntity:
          Name:
            NameFull: Buckley, Julien
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 21
              M: 10
              Text: 10/21/2025
              Type: published
              Y: 2025
          Identifiers:
            – Type: issn-print
              Value: 20452322
          Numbering:
            – Type: volume
              Value: 15
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Scientific Reports
              Type: main
ResultId 1