p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.

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Bibliographic Details
Title: p-GaN source integrated GaN/AlGaN/GaN double heterojunction field-effect transistor (FET) for next-generation electronic applications.
Authors: Kumar, Mohit1 (AUTHOR) mohit.kumar@cea.fr, Labau, Timothée1,2 (AUTHOR), Xu, Laurent1 (AUTHOR), Zgheib, Joelle1 (AUTHOR), Escoffier, René1 (AUTHOR), Buckley, Julien1 (AUTHOR) julien.buckley@cea.fr
Source: Scientific Reports. 10/21/2025, Vol. 15 Issue 1, p1-10. 10p.
Database: Academic Search Ultimate
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