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Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors.

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Bibliographic Details
Title: Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors.
Authors: Guo, Zejing1,2 (AUTHOR), Sha, Xuyang1,2 (AUTHOR), Xu, Fang3 (AUTHOR), Huang, Guangyi4 (AUTHOR), Zhang, Jinfeng3 (AUTHOR), Mou, Yang1,2 (AUTHOR), Zhao, Guorui1,2 (AUTHOR), Liu, Jiaqi1,2 (AUTHOR), Lan, Qing1,2 (AUTHOR), Song, Wenqing1,2 (AUTHOR), Zhang, Cheng1,2 (AUTHOR), Huang, Hai5 (AUTHOR), Zheng, Changlin4 (AUTHOR), Wang, Lingfei3 (AUTHOR), Guo, Hangwen1,2,6 (AUTHOR) hangwenguo@fudan.edu.cn, Shen, Jian1,2,4,6 (AUTHOR) shenj5494@fudan.edu.cn, Shi, Wu1,2 (AUTHOR) shiwu@fudan.edu.cn
Source: Advanced Science. 2/27/2026, Vol. 13 Issue 12, p1-10. 10p.
Database: Academic Search Ultimate
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ISSN:21983844
DOI:10.1002/advs.202520610