APA (7th ed.) Citation

Guo, Z., Sha, X., Xu, F., Huang, G., Zhang, J., Mou, Y., . . . Shi, W. (2026). Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors. Advanced Science, 13(12), 1. https://doi.org/10.1002/advs.202520610

Chicago Style (17th ed.) Citation

Guo, Zejing, et al. "Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors." Advanced Science 13, no. 12 (2026): 1. https://doi.org/10.1002/advs.202520610.

MLA (9th ed.) Citation

Guo, Zejing, et al. "Integration of Freestanding High‐k Oxide Membranes for 2D Ferroelectric Field‐Effect Transistors." Advanced Science, vol. 13, no. 12, 2026, p. 1, https://doi.org/10.1002/advs.202520610.