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NMOS Hot Carrier Stressed Current Degradation Due to Hydrogen Deactivation of Dopant Determined by Junction Profiling.

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Bibliographic Details
Title: NMOS Hot Carrier Stressed Current Degradation Due to Hydrogen Deactivation of Dopant Determined by Junction Profiling.
Authors: Wang, Yun-Yu1 (AUTHOR), Nxumalo, Jochonia1 (AUTHOR), Zhang, Haigang1 (AUTHOR), Smith, Mike1 (AUTHOR)
Source: Microscopy Today. May2026, Vol. 34 Issue 3, p26-33. 8p.
Database: Academic Search Ultimate
Description
ISSN:15519295
DOI:10.1093/mictod/qaag050