APA (7th ed.) Citation

Wang, Y., Nxumalo, J., Zhang, H., & Smith, M. (2026). NMOS Hot Carrier Stressed Current Degradation Due to Hydrogen Deactivation of Dopant Determined by Junction Profiling. Microscopy Today, 34(3), 26. https://doi.org/10.1093/mictod/qaag050

Chicago Style (17th ed.) Citation

Wang, Yun-Yu, Jochonia Nxumalo, Haigang Zhang, and Mike Smith. "NMOS Hot Carrier Stressed Current Degradation Due To Hydrogen Deactivation of Dopant Determined by Junction Profiling." Microscopy Today 34, no. 3 (2026): 26. https://doi.org/10.1093/mictod/qaag050.

MLA (9th ed.) Citation

Wang, Yun-Yu, et al. "NMOS Hot Carrier Stressed Current Degradation Due To Hydrogen Deactivation of Dopant Determined by Junction Profiling." Microscopy Today, vol. 34, no. 3, 2026, p. 26, https://doi.org/10.1093/mictod/qaag050.