TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology
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| Title: | TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology |
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| Authors: | Miyoshi, J.1,2 julianamiyoshi@gmail.com, Lima, L.P.B.1,2, Diniz, J.A.1,2, Cavarsan, F.A.1,2, Doi, I.1,2, Godoy Filho, J.2, Silva, A.R.1,2 |
| Source: | Microelectronic Engineering. Apr2012, Vol. 92, p140-144. 5p. |
| Database: | Academic Search Ultimate |
| ISSN: | 01679317 |
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| DOI: | 10.1016/j.mee.2011.05.015 |
