APA (7th ed.) Citation

Miyoshi, J., Lima, L., Diniz, J., Cavarsan, F., Doi, I., Godoy Filho, J., & Silva, A. (2012). TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology. Microelectronic Engineering, 92, 140. https://doi.org/10.1016/j.mee.2011.05.015

Chicago Style (17th ed.) Citation

Miyoshi, J., L.P.B Lima, J.A Diniz, F.A Cavarsan, I. Doi, J. Godoy Filho, and A.R Silva. "TiN/titanium–aluminum Oxynitride/Si as New Gate Structure for 3D MOS Technology." Microelectronic Engineering 92 (2012): 140. https://doi.org/10.1016/j.mee.2011.05.015.

MLA (9th ed.) Citation

Miyoshi, J., et al. "TiN/titanium–aluminum Oxynitride/Si as New Gate Structure for 3D MOS Technology." Microelectronic Engineering, vol. 92, 2012, p. 140, https://doi.org/10.1016/j.mee.2011.05.015.