View in EDS

TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology

Saved in:
Bibliographic Details
Title: TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology
Authors: Miyoshi, J.1,2 julianamiyoshi@gmail.com, Lima, L.P.B.1,2, Diniz, J.A.1,2, Cavarsan, F.A.1,2, Doi, I.1,2, Godoy Filho, J.2, Silva, A.R.1,2
Source: Microelectronic Engineering. Apr2012, Vol. 92, p140-144. 5p.
Database: Academic Search Ultimate
FullText Text:
  Availability: 0
Header DbId: asn
DbLabel: Academic Search Ultimate
An: 73775402
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AR" term="%22Miyoshi%2C+J%2E%22">Miyoshi, J.</searchLink><relatesTo>1,2</relatesTo><i> julianamiyoshi@gmail.com</i><br /><searchLink fieldCode="AR" term="%22Lima%2C+L%2EP%2EB%2E%22">Lima, L.P.B.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Diniz%2C+J%2EA%2E%22">Diniz, J.A.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Cavarsan%2C+F%2EA%2E%22">Cavarsan, F.A.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Doi%2C+I%2E%22">Doi, I.</searchLink><relatesTo>1,2</relatesTo><br /><searchLink fieldCode="AR" term="%22Godoy+Filho%2C+J%2E%22">Godoy Filho, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Silva%2C+A%2ER%2E%22">Silva, A.R.</searchLink><relatesTo>1,2</relatesTo>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22Microelectronic+Engineering%22">Microelectronic Engineering</searchLink>. Apr2012, Vol. 92, p140-144. 5p.
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=asn&AN=73775402
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.mee.2011.05.015
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 5
        StartPage: 140
    Titles:
      – TitleFull: TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Miyoshi, J.
      – PersonEntity:
          Name:
            NameFull: Lima, L.P.B.
      – PersonEntity:
          Name:
            NameFull: Diniz, J.A.
      – PersonEntity:
          Name:
            NameFull: Cavarsan, F.A.
      – PersonEntity:
          Name:
            NameFull: Doi, I.
      – PersonEntity:
          Name:
            NameFull: Godoy Filho, J.
      – PersonEntity:
          Name:
            NameFull: Silva, A.R.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 04
              Text: Apr2012
              Type: published
              Y: 2012
          Identifiers:
            – Type: issn-print
              Value: 01679317
          Numbering:
            – Type: volume
              Value: 92
          Titles:
            – TitleFull: Microelectronic Engineering
              Type: main
ResultId 1