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TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology

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Bibliographic Details
Title: TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology
Authors: Miyoshi, J.1,2 julianamiyoshi@gmail.com, Lima, L.P.B.1,2, Diniz, J.A.1,2, Cavarsan, F.A.1,2, Doi, I.1,2, Godoy Filho, J.2, Silva, A.R.1,2
Source: Microelectronic Engineering. Apr2012, Vol. 92, p140-144. 5p.
Database: Academic Search Ultimate
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