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Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited witha Germanium Nucleation Layer.

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Title: Phenomenological Model of the Growth of Ultrasmooth Silver Thin Films Deposited witha Germanium Nucleation Layer.
Authors: Junce Zhang1, DavidM. Fryauf1, Matthew Garrett1, VJ Logeeswaran1, Atsuhito Sawabe1, M. Saif Islam1, Nobuhiko P. Kobayashi1
Source: Langmuir. Jul2015, Vol. 31 Issue 28, p7852-7859. 8p.
Subjects: Phenomenological theory (Physics), Thin film deposition, Silver, Germanium, Nucleation, Silicon oxide
Abstract: Thestructural properties of optically thin (15 nm) silver (Ag)films deposited on SiO2/Si(100) substrates with a germanium(Ge) nucleation layer were studied. The morphological and crystallographicalcharacteristics of Ag thin films with different Ge nucleation layerthicknesses were assessed by cross-sectional transmission electronmicroscopy (XTEM), reflection high-energy electron diffraction (RHEED),X-ray diffractometry (XRD), grazing incidence X-ray diffractometry(GIXRD), X-ray reflection (XRR), and Fourier transform infrared spectroscopy(FTIR). The surface roughness of Ag thin films was found to decreasesignificantly by inserting a Ge nucleation layer with a thicknessin the range of 1 to 2 nm (i.e., smoothing mode). However, as theGe nucleation layer thickness increased beyond 2 nm, the surface roughnessincreased concomitantly (i.e., roughing mode). For the smoothing mode,the role of the Ge nucleation layer in the Ag film deposition is discussedby invoking the surface energy of Ge, the bond dissociation energyof Ag–Ge, and the deposition mechanisms of Ag thin films ona given characteristic Ge nucleation layer. Additionally, Ge islandformation, the precipitation of Ge from Ag–Ge alloys, and thepenetration of Ge into SiO2are suggested for the roughingmode. This demonstration of ultrasmooth Ag thin films would offeran advantageous material platform with scalability for applicationssuch as optics, plasmonics, and photonics. [ABSTRACT FROM AUTHOR]
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Abstract:Thestructural properties of optically thin (15 nm) silver (Ag)films deposited on SiO2/Si(100) substrates with a germanium(Ge) nucleation layer were studied. The morphological and crystallographicalcharacteristics of Ag thin films with different Ge nucleation layerthicknesses were assessed by cross-sectional transmission electronmicroscopy (XTEM), reflection high-energy electron diffraction (RHEED),X-ray diffractometry (XRD), grazing incidence X-ray diffractometry(GIXRD), X-ray reflection (XRR), and Fourier transform infrared spectroscopy(FTIR). The surface roughness of Ag thin films was found to decreasesignificantly by inserting a Ge nucleation layer with a thicknessin the range of 1 to 2 nm (i.e., smoothing mode). However, as theGe nucleation layer thickness increased beyond 2 nm, the surface roughnessincreased concomitantly (i.e., roughing mode). For the smoothing mode,the role of the Ge nucleation layer in the Ag film deposition is discussedby invoking the surface energy of Ge, the bond dissociation energyof Ag–Ge, and the deposition mechanisms of Ag thin films ona given characteristic Ge nucleation layer. Additionally, Ge islandformation, the precipitation of Ge from Ag–Ge alloys, and thepenetration of Ge into SiO2are suggested for the roughingmode. This demonstration of ultrasmooth Ag thin films would offeran advantageous material platform with scalability for applicationssuch as optics, plasmonics, and photonics. [ABSTRACT FROM AUTHOR]
ISSN:07437463
DOI:10.1021/acs.langmuir.5b01244