Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared.

Saved in:

Bibliographic Details
Title:	Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared.
Authors:	Achour, Zahra Ben¹ zbenachour@yahoo.fr, Hammami, Marwa², Touayar, Oualid¹
Source:	International Journal of Metrology & Quality Engineering. 2017, Vol. 8 Issue 24, p1-7. 7p.
Subjects:	Photodiodes, Optical radiometry, Near infrared radiation, Germanium, Zinc oxide, Shunt electric reactors
Abstract:	The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800nm to 2000 nm. The shunt resistance increases from 95V to 12.915 kV. However, the series resistance increases from 1.08V to 36V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results. [ABSTRACT FROM AUTHOR]
	Copyright of International Journal of Metrology & Quality Engineering is the property of EDP Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database:	Engineering Source

Description
Abstract:	The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800nm to 2000 nm. The shunt resistance increases from 95V to 12.915 kV. However, the series resistance increases from 1.08V to 36V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results. [ABSTRACT FROM AUTHOR]
ISSN:	21076839
DOI:	10.1051/ijmqe/2017013