Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared.

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Title: Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared.
Authors: Achour, Zahra Ben1 zbenachour@yahoo.fr, Hammami, Marwa2, Touayar, Oualid1
Source: International Journal of Metrology & Quality Engineering. 2017, Vol. 8 Issue 24, p1-7. 7p.
Subjects: Photodiodes, Optical radiometry, Near infrared radiation, Germanium, Zinc oxide, Shunt electric reactors
Abstract: The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800nm to 2000 nm. The shunt resistance increases from 95V to 12.915 kV. However, the series resistance increases from 1.08V to 36V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results. [ABSTRACT FROM AUTHOR]
Copyright of International Journal of Metrology & Quality Engineering is the property of EDP Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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  Data: Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared.
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  Data: <searchLink fieldCode="AR" term="%22Achour%2C+Zahra+Ben%22">Achour, Zahra Ben</searchLink><relatesTo>1</relatesTo><i> zbenachour@yahoo.fr</i><br /><searchLink fieldCode="AR" term="%22Hammami%2C+Marwa%22">Hammami, Marwa</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Touayar%2C+Oualid%22">Touayar, Oualid</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22International+Journal+of+Metrology+%26+Quality+Engineering%22">International Journal of Metrology & Quality Engineering</searchLink>. 2017, Vol. 8 Issue 24, p1-7. 7p.
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  Data: <searchLink fieldCode="DE" term="%22Photodiodes%22">Photodiodes</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+radiometry%22">Optical radiometry</searchLink><br /><searchLink fieldCode="DE" term="%22Near+infrared+radiation%22">Near infrared radiation</searchLink><br /><searchLink fieldCode="DE" term="%22Germanium%22">Germanium</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Shunt+electric+reactors%22">Shunt electric reactors</searchLink>
– Name: Abstract
  Label: Abstract
  Group: Ab
  Data: The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800nm to 2000 nm. The shunt resistance increases from 95V to 12.915 kV. However, the series resistance increases from 1.08V to 36V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of International Journal of Metrology & Quality Engineering is the property of EDP Sciences and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1051/ijmqe/2017013
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 7
        StartPage: 1
    Subjects:
      – SubjectFull: Photodiodes
        Type: general
      – SubjectFull: Optical radiometry
        Type: general
      – SubjectFull: Near infrared radiation
        Type: general
      – SubjectFull: Germanium
        Type: general
      – SubjectFull: Zinc oxide
        Type: general
      – SubjectFull: Shunt electric reactors
        Type: general
    Titles:
      – TitleFull: Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared.
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            NameFull: Achour, Zahra Ben
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            NameFull: Hammami, Marwa
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            NameFull: Touayar, Oualid
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            – D: 22
              M: 08
              Text: 2017
              Type: published
              Y: 2017
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              Value: 8
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              Value: 24
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            – TitleFull: International Journal of Metrology & Quality Engineering
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