Bibliographic Details
| Title: |
Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors. |
| Authors: |
Xu, Piao-Rong1, Yao, Ruo-He1 phrhyao@scut.edu.cn |
| Source: |
Displays. Jul2018, Vol. 53, p14-17. 4p. |
| Subjects: |
Threshold voltage, Thin film transistors, Indium gallium zinc oxide, Strains & stresses (Mechanics), Electron tunneling |
| Abstract: |
An analytical threshold-voltage (V th ) shift model of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) under positive gate bias stress (PGBS) is reported in this paper. It is demonstrated that electrons in active layers of a-IGZO TFTs can tunnel into gate insulators when PGBS is applied, and a portion of the tunneled electrons would tunnel back. The transfer distance of the tunneled electrons and the time-dependent electron distribution in gate insulators are analyzed with the back-tunneling effect taken into consideration. Finally the V th shift under PGBS is predicted and the influences of gate voltage and stress time are discussed. The calculated V th shift under PGBS shows good consistency with the reported experimental data. [ABSTRACT FROM AUTHOR] |
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| Database: |
Engineering Source |
