Highly Sensitive DNA Detection Beyond the Debye Screening Length Using CMOS Field Effect Transistors.
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| Title: | Highly Sensitive DNA Detection Beyond the Debye Screening Length Using CMOS Field Effect Transistors. |
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| Authors: | Chen, Yi-Wei1 (AUTHOR), Lu, Michael S.-C.1 (AUTHOR) sclu@ee.nthu.edu.tw |
| Source: | IEEE Electron Device Letters. Aug2021, Vol. 42 Issue 8, p1220-1223. 4p. |
| Subjects: | Field-effect transistors, Debye length, Complementary metal oxide semiconductors, DNA, Sensor arrays |
| Abstract: | Field effect transistors are considered one of the key technologies to provide real-time and label-free biodetection. Direct detection in physiological solutions is, however, severely limited by the Debye charge-screening effect of the electrical double layer. Most measurements are therefore performed indirectly in diluted ionic-strength solutions. This study proposes a general technique based on modulation of the surface electric field of the CMOS (complementary metal oxide semiconductor) extended-gate field effect transistors (EGFETs) to investigate the screening effect on hybridized DNA (deoxyribonucleic acid) signals from 1 MHz to 15 MHz. The 32 EGFET sensor array exhibited a floating-gate potential change of 17.4 mV/log[DNA] from 1 fM to 100 pM with a near picomolar-level resolution and a response time below 8 minutes. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 153094688 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Highly Sensitive DNA Detection Beyond the Debye Screening Length Using CMOS Field Effect Transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Chen%2C+Yi-Wei%22">Chen, Yi-Wei</searchLink><relatesTo>1</relatesTo> (AUTHOR)<br /><searchLink fieldCode="AR" term="%22Lu%2C+Michael+S%2E-C%2E%22">Lu, Michael S.-C.</searchLink><relatesTo>1</relatesTo> (AUTHOR)<i> sclu@ee.nthu.edu.tw</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>. Aug2021, Vol. 42 Issue 8, p1220-1223. 4p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Debye+length%22">Debye length</searchLink><br /><searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22DNA%22">DNA</searchLink><br /><searchLink fieldCode="DE" term="%22Sensor+arrays%22">Sensor arrays</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: Field effect transistors are considered one of the key technologies to provide real-time and label-free biodetection. Direct detection in physiological solutions is, however, severely limited by the Debye charge-screening effect of the electrical double layer. Most measurements are therefore performed indirectly in diluted ionic-strength solutions. This study proposes a general technique based on modulation of the surface electric field of the CMOS (complementary metal oxide semiconductor) extended-gate field effect transistors (EGFETs) to investigate the screening effect on hybridized DNA (deoxyribonucleic acid) signals from 1 MHz to 15 MHz. The 32 EGFET sensor array exhibited a floating-gate potential change of 17.4 mV/log[DNA] from 1 fM to 100 pM with a near picomolar-level resolution and a response time below 8 minutes. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Electron Device Letters is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2021.3090035 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 1220 Subjects: – SubjectFull: Field-effect transistors Type: general – SubjectFull: Debye length Type: general – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: DNA Type: general – SubjectFull: Sensor arrays Type: general Titles: – TitleFull: Highly Sensitive DNA Detection Beyond the Debye Screening Length Using CMOS Field Effect Transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chen, Yi-Wei – PersonEntity: Name: NameFull: Lu, Michael S.-C. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 08 Text: Aug2021 Type: published Y: 2021 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 42 – Type: issue Value: 8 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
| ResultId | 1 |
