Bibliographic Details
| Title: |
Trivalent Gadolinium-Doped Diopside (CaMgSi2O6) for Photoluminescence and EPR Investigation. |
| Authors: |
Singh, Vijay1 vijayjiin2006@yahoo.com, Nandyala, Sooraj H.2, Natarajan, V.3, Joo, Ji Bong1 |
| Source: |
Journal of Electronic Materials. Oct2022, Vol. 51 Issue 10, p5521-5527. 7p. |
| Subjects: |
Diopside, Electron paramagnetic resonance, Photoluminescence, Scanning electron microscopy, X-ray powder diffraction |
| Abstract: |
Gd3+-doped CaMgSi2O6 phosphors with varying dopant content were processed successfully using sol-gel preparation. Prepared products were verified by x-ray diffraction data, which indicated the formation of a monoclinic phase. Scanning electron microscopy suggested the formation of tightly aggregated phosphor particles. A strong photoluminescence emission peak of 6P7/2 → 8S7/2 at 313 nm was observed in the studied phosphors under 273-nm excitation. The changes in emission intensity were also monitored with respect to the concentration of Gd3+. X-band electron paramagnetic resonance (EPR) spectra of the phosphors revealed the fine structure lines of Gd3+ ions typical of orthorhombic or lower symmetry. In addition, the intensity of the EPR spectrum from Gd3+ showed saturation beyond 0.03 mol of Gd3+ doping. [ABSTRACT FROM AUTHOR] |
|
Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) |
| Database: |
Engineering Source |