Performance Analysis of MoTe2/MoSe2 and MoTe2/WSe2 Heterostructure Double-Gate MOSFET.
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| Title: | Performance Analysis of MoTe |
|---|---|
| Authors: | Manjula, M. Muthu1, Ramesh, R.1 ramesh24.dr@gmail.com |
| Source: | Journal of Electronic Materials. Nov2023, Vol. 52 Issue 11, p7694-7707. 14p. |
| Subjects: | Metal oxide semiconductor field-effect transistors, Thin film transistors, Pink noise, Field-effect transistors, Density functional theory, Threshold voltage, White noise |
| Abstract: | In this work, the performance of a heterostructure molybdenum ditelluride (MoTe2/MoSe2 and MoTe2/WSe2) double-gate (DG) metal–oxide–semiconductor field-effect transistor (MOSFET) was investigated using a hybrid methodology. The device characteristics were obtained using 2H-type bilayer MoTe2 and a heterobilayer of MoTe2/MoSe2 and MoTe2/WSe2 as channel material in a DG MOSFET. The methodology uses both the QuantumWise Atomistix ToolKit (ATK) and Sentaurus TCAD (technology computer-aided design) tool to simulate the device characteristics. First, density functional theory was used to simulate the electrical parameters of bilayer 2H-MoTe2, heterobilayer MoTe2/MoSe2, and MoTe2/WSe2. The parameters (bandgap and effective mass, mobility, etc.) obtained using the atomistic simulator tool were exported into Sentaurus TCAD to simulate the drain current characteristics, such as on-current (Ion), Ion/Ioff ratio, subthreshold swing, and threshold voltage. The noise performance of the devices was also studied for the heterostructure DG MOSFET using impedance field method and compared with its bilayer MoTe2 counterpart values. Noise parameters such as noise power spectral density (SID) and noise figure as a function of both frequency and bias were also simulated, and noise components such as generation–recombination (G-R) noise, flicker noise, and white noise were obtained. [ABSTRACT FROM AUTHOR] |
| Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Items | – Name: Title Label: Title Group: Ti Data: Performance Analysis of MoTe<subscript>2</subscript>/MoSe<subscript>2</subscript> and MoTe<subscript>2</subscript>/WSe<subscript>2</subscript> Heterostructure Double-Gate MOSFET. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Manjula%2C+M%2E+Muthu%22">Manjula, M. Muthu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ramesh%2C+R%2E%22">Ramesh, R.</searchLink><relatesTo>1</relatesTo><i> ramesh24.dr@gmail.com</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Electronic+Materials%22">Journal of Electronic Materials</searchLink>. Nov2023, Vol. 52 Issue 11, p7694-7707. 14p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+film+transistors%22">Thin film transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Pink+noise%22">Pink noise</searchLink><br /><searchLink fieldCode="DE" term="%22Field-effect+transistors%22">Field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Density+functional+theory%22">Density functional theory</searchLink><br /><searchLink fieldCode="DE" term="%22Threshold+voltage%22">Threshold voltage</searchLink><br /><searchLink fieldCode="DE" term="%22White+noise%22">White noise</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: In this work, the performance of a heterostructure molybdenum ditelluride (MoTe2/MoSe2 and MoTe2/WSe2) double-gate (DG) metal–oxide–semiconductor field-effect transistor (MOSFET) was investigated using a hybrid methodology. The device characteristics were obtained using 2H-type bilayer MoTe2 and a heterobilayer of MoTe2/MoSe2 and MoTe2/WSe2 as channel material in a DG MOSFET. The methodology uses both the QuantumWise Atomistix ToolKit (ATK) and Sentaurus TCAD (technology computer-aided design) tool to simulate the device characteristics. First, density functional theory was used to simulate the electrical parameters of bilayer 2H-MoTe2, heterobilayer MoTe2/MoSe2, and MoTe2/WSe2. The parameters (bandgap and effective mass, mobility, etc.) obtained using the atomistic simulator tool were exported into Sentaurus TCAD to simulate the drain current characteristics, such as on-current (Ion), Ion/Ioff ratio, subthreshold swing, and threshold voltage. The noise performance of the devices was also studied for the heterostructure DG MOSFET using impedance field method and compared with its bilayer MoTe2 counterpart values. Noise parameters such as noise power spectral density (SID) and noise figure as a function of both frequency and bias were also simulated, and noise components such as generation–recombination (G-R) noise, flicker noise, and white noise were obtained. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of Journal of Electronic Materials is the property of Springer Nature and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1007/s11664-023-10696-0 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 14 StartPage: 7694 Subjects: – SubjectFull: Metal oxide semiconductor field-effect transistors Type: general – SubjectFull: Thin film transistors Type: general – SubjectFull: Pink noise Type: general – SubjectFull: Field-effect transistors Type: general – SubjectFull: Density functional theory Type: general – SubjectFull: Threshold voltage Type: general – SubjectFull: White noise Type: general Titles: – TitleFull: Performance Analysis of MoTe2/MoSe2 and MoTe2/WSe2 Heterostructure Double-Gate MOSFET. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Manjula, M. Muthu – PersonEntity: Name: NameFull: Ramesh, R. IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2023 Type: published Y: 2023 Identifiers: – Type: issn-print Value: 03615235 Numbering: – Type: volume Value: 52 – Type: issue Value: 11 Titles: – TitleFull: Journal of Electronic Materials Type: main |
| ResultId | 1 |
